| Zugriffsnummer | 34671 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Impact of line edge roughness patterns on reconstructed critical dimensions in scatterometry |
| Autor(in); Institution |
Gross, Hermann; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Heidenreich, Sebastian; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Henn, Mark-Alexander; NIST, Gaithersburg, USA
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Dai, Gaoliang; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Rathsfeld, Andreas; Weierstrass Institute for Applied Analysis and Stochastic, Berlin, GERMANY
Bär, Markus; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
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| Quelle/Jahr | Frontiers of Characterization and Metrology for Nanoelectronics, April 14-16 2015, Dresden, Germany:(2015), 162 - 163 |
| Herausgeber(in) |
Secula, E.M.
Seiler, D.G.
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| URL | |
| Konferenzangaben | Frontiers of Characterization and Metrology for Nanoelectronics, Dresden, 14-16, April, 2015, Germany |
| Freie Schlagworte | Scatterometry ; line edge roughness (LER) ; finite element method (FEM) ; Fourier optics ; Fraunhofer approximation |
| Zusammenfassung | In angular resolved scatterometry, the measured diffraction intensities are effected by structure roughness. We investigate this impact by rigorous finite element method (FEM) calculations for an EUV photomask with periodic line-space structures. Repeated calculations for large FEM domains with stochastically chosen line and space widths are applied. Complementary simulations based on 2D-Fourier transforms for samples of binary 2D gratings confirm the FEM results. The edge roughness of the binary 2D gratings are modelled by a power spectrum density (PSD) function providing a more realistic approach for line roughness. |
Zitierung
Gross, H., Heidenreich, S., Henn, M.-A., Scholze, F., Dai, G., Rathsfeld, A., & Bär, M. (2015). Impact of line edge roughness patterns on reconstructed critical dimensions in scatterometry. Frontiers of Characterization and Metrology for Nanoelectronics, Dresden, 14-16, April, 2015, Germany.