| Zugriffsnummer | 34367 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Growth and structural properties of (GaIn) As/Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy |
| Autor(in); Institution |
Rettig, R.; Philipps-Universität, Material Science Center and Department of Physics, Marburg, GERMANY
Marschner, T.; Philipps-Universität, Material Science Center and Department of Physics, Marburg, GERMANY; Eindhoven University of Technology, COBRA Inter-University Research Institute, Eindhoven, THE NETHERLANDS
Tapfer, L.; CNRSM, Brindisi, ITALY
Stolz, W.; Philipps-Universität, Material Science Center and Department of Physics, Marburg, GERMANY
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig; Philipps-Universität, Material Science Center and Department of Physics, Marburg, GERMANY
|
| Quelle/Jahr | Journal of Crystal Growth: 170 (1997), 1/4, 748 - 751 |
| ISSN | 0022-0248 |
| DOI | |
| Verlag | Amsterdam: North-Holland, Elsevier |
| Konferenzangaben | Eighth International Conference on Metalorganic Vapour Phase Epitaxy, Cardiff, 09-13, June, 1996, UK |
| Zusammenfassung | We present an X-ray diffraction (XRD) study of symmetrically strained superlattice structures with intentionally fluctuating individual layer thicknesses. Samples with periodic, aperiodic (random) and graded fluctuations have been realized by metalorganic vapor phase epitaxy (MOVPE). The precise structural properties of the disordered multilayer structures have been determined by high resolution XRD in combination with both kinematical as well as dynamical XRD theory. Periodic modulation of the compressive-strained (GaIn)As layers leads to peak splitting on the "tensile-strained" part of the XRD spectrum, while periodic variation of the tensile-strained Ga(PAs) layers results in splitting on the "compressive-strained" part. Aperiodic variation causes a broadening of the respective peaks. The study demonstrates the power of XRD to quantify fluctuations of layer thicknesses in the growth direction down to the monolayer level. |
Zitierung
Rettig, R., Marschner, T., Tapfer, L., Stolz, W., & Göbel, E. O. (1997). Growth and structural properties of (GaIn) As/Ga(PAs) intentionally disordered superlattice structures grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 170(1/4), 748–751. https://doi.org/10.1016/s0022-0248(96)00511-8