| Zugriffsnummer | 33560 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Monolithic gallium arsenide cantilever for scanning near-field microscopy |
| Autor(in); Institution |
Heisig, S.; University of Kassel, Institute of Technical Physics, Kassel, GERMANY
Danzebrink, Hans-Ulrich; 5.12, Mikrotopographie, PTB-Braunschweig
Leyk, A.; Gerhard-Mercator-Universität-GH Duisburg, Fachgebiet Werkstoffe der Elektrotechnik, Duisburg, GERMANY
Mertin, W.; Gerhard-Mercator-Universität-GH Duisburg, Fachgebiet Werkstoffe der Elektrotechnik, Duisburg, GERMANY
Münster, S.; University of Kassel, Institute of Technical Physics, Kassel, GERMANY
Oesterschulze, E.; University of Kassel, Institute of Technical Physics, Kassel, GERMANY
|
| Quelle/Jahr | Ultramicroscopy: 71 (1998), 1-4, 99 - 105 |
| ISSN | 0304-3991 |
| DOI | |
| Verlag | New York, NY: Elsevier |
| Klassifikationscode | PACS: 07.79 PACS: 07.79.C ; PACS: 07.79.L ; PACS: 84.40 |
| Freie Schlagworte | Scanning probe microscopes ; Near-field scanning optical microscopy ; Atomic force microscopy ; Microwave technology |
| Zusammenfassung | In this paper we report on the fabrication of monolithic cantilevers for scanning probe microscopy (SPM) based on gallium arsenide material. For this purpose the etching properties of (1 0 0) oriented GaAs were studied to develop cantilevers with integrated tip of proper shape and aspect ratio. Although the mechanical properties of GaAs are similar to those of silicon – the basic material for microstructure technology – there are optical and electrical features unique to GaAs and related III/V semiconductors. The aim is to develop novel active and passive SPM probes exploiting these properties. Two probes are presented: at first a Schottky diode is integrated into a cantilever tip which can be used as an optical and thermal sensor for scanning near-field optical microscopy (SNOM) and scanning thermal microscopy (SThM). Furthermore, a coplanar wave guide probe for high-frequency scanning electron force microscopy (HFSEFM) was fabricated based on semi-insulating GaAs exploiting its advantageous dielectric properties. |
