Epitaxial graphene on SiC: modiﬁcation of structural and electron transport properties by substrate pretreatment

Kruskopf, Mattias; Pierz, Klaus; Wundrack, Stefan; Stosch, Rainer; Dziomba, Thorsten; Kalmbach, Cay-Christian; Müller, André; Baringhaus, Jens; Tegenkamp, Christoph; Ahlers, Franz Josef; Schumacher, Hans Werner

doi:https://doi.org/10.1088/0953-8984/27/18/185303

Zugriffsnummer	33544
Dokumenttyp	Zeitschriftenartikel
Peer Review	unbekannt
Sprache	Englisch
Titel	Epitaxial graphene on SiC: modiﬁcation of structural and electron transport properties by substrate pretreatment
Autor(in); Institution	Kruskopf, Mattias; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig Wundrack, Stefan; 3.1, Metrologie in der Chemie, PTB-Braunschweig Stosch, Rainer; 3.1, Metrologie in der Chemie, PTB-Braunschweig Dziomba, Thorsten; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig Kalmbach, Cay-Christian; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig Müller, André; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig Baringhaus, Jens; Leibniz Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY Tegenkamp, Christoph; Leibniz Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Quelle/Jahr	Journal of Physics: Condensed Matter: 27 (2015), 18, 1 - 7
Artikelnummer	185303
ISSN	0953-8984
DOI	https://doi.org/10.1088/0953-8984/27/18/185303
URL	arxiv.org/abs/1502.03927
Verlag	Bristol: IOP Publ.
Klassifikationscode	PACS: 73.61.Wp ; PACS: 68.35.B- ; PACS: 81.65.Cf ; PACS: 78.30.Na ; PACS: 61.48.-c ; PACS: 68.37.Ps
Freie Schlagworte	epitaxial graphene ; step bunching ; quantum Hall resistance ; graphene buffer layer
Zusammenfassung	The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change signiﬁcantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0 0 0 1) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro-steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step ﬂow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5 × 10^-9 which qualiﬁes this method for the fabrication of electrical quantum standards.

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Kruskopf, M., Pierz, K., Wundrack, S., Stosch, R., Dziomba, T., Kalmbach, C.-C., Müller, A., Baringhaus, J., Tegenkamp, C., Ahlers, F. J., & Schumacher, H. W. (2015). Epitaxial graphene on SiC: modiﬁcation of structural and electron transport properties by substrate pretreatment. Journal of Physics: Condensed Matter, 27(18), 1–7. https://doi.org/10.1088/0953-8984/27/18/185303

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