Noise in Al single electron transistors of stacked design

Krupenin, V. A.; Presnov, D. E.; Savvateev, M. N.; Scherer, Hansjörg; Zorin, Alexander B.; Niemeyer, Jürgen

doi:https://doi.org/10.1063/1.368474

Zugriffsnummer	33168
Dokumenttyp	Zeitschriftenartikel
Sprache	Englisch
Titel	Noise in Al single electron transistors of stacked design
Autor(in); Institution	Krupenin, V. A.; Laboratory of Cryoelectronics, Moscow State University, Moscow, RUSSIA Presnov, D. E.; Laboratory of Cryoelectronics, Moscow State University, Moscow, RUSSIA Savvateev, M. N.; Laboratory of Cryoelectronics, Moscow State University, Moscow, RUSSIA Scherer, Hansjörg; 2.401, Einzelelektronentunneln, PTB-Braunschweig Zorin, Alexander B.; 2.401, Einzelelektronentunneln, PTB-Braunschweig Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
Quelle/Jahr	Journal of Applied Physics: 84 (1998), 6, 3212 - 3215
ISSN	0021-8979 (PRINT) ; 1089-7550 (ONLINE)
DOI	https://doi.org/10.1063/1.368474
Verlag	Melville, NY: AIP
Freie Schlagworte	Single electron transistors ; Dielectric thin films
Zusammenfassung	We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counterelectrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5–7)×10⁻⁵e/ √Hz at f=10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.

Zitierung

Krupenin, V. A., Presnov, D. E., Savvateev, M. N., Scherer, H., Zorin, A. B., & Niemeyer, J. (1998). Noise in Al single electron transistors of stacked design. Journal of Applied Physics, 84(6), 3212–3215. https://doi.org/10.1063/1.368474

Exportieren

RIS BibTeX

Zitierung

Exportieren

PTB-Publica Menü