| Zugriffsnummer | 33166 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Sensing of dynamic charge states using single-electron tunneling transistors |
| Autor(in); Institution |
Krupenin, V. A.; Laboratory of Cryoelectronics, M.V. Lomonosov Moscow State University, Moscow, RUSSIA
Lotkhov, Sergey V.; Laboratory of Cryoelectronics, M.V. Lomonosov Moscow State University, Moscow, RUSSIA
Scherer, Hansjörg; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Zorin, Alexander B.; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Ahlers, Franz Josef; 2.2, Hochfrequenz und Magnetismus, PTB-Braunschweig
Niemeyer, Jürgen; 2.4, Quantenelektronik, PTB-Braunschweig
Wolf, Henning; 3.11, Dichte, PTB-Braunschweig
|
| Quelle/Jahr | Physics: Uspekhi: 41 (1998), 2, 204 - 206 |
| ISSN | 1063-7869 (PRINT) ; 1468-4780 (ONLINE) |
| DOI | |
| Verlag | Moscow: Uspekhi Fizicheskikh Nauk |
| Klassifikationscode | PACS: 73.40.-c |
| Freie Schlagworte | Surfaces, interfaces and thin films |
Zitierung
Krupenin, V. A., Lotkhov, S. V., Scherer, H., Zorin, A. B., Ahlers, F. J., Niemeyer, J., & Wolf, H. (1998). Sensing of dynamic charge states using single-electron tunneling transistors. Physics: Uspekhi, 41(2), 204–206. https://doi.org/10.1070/pu1998v041n02abeh000365