| Zugriffsnummer | 33151 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions |
| Autor(in); Institution |
Baumann, Thomas M.; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY; National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan, USA
Harman, Zoltán; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY; ExtreMe Matter Institute EMMI, Darmstadt, GERMANY
Stark, Julian; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY
Beilmann, Christian; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY
Liang, Guiyun; Key Laboratory of Optical Astronomy, National Astronomical Observatories, CAS, Beijing, CHINA
Mokler, Paul H.; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY
Ullrich, Joachim; Präsidium, P, PTB-Braunschweig
Crespo López-Urrutia, José R.; Max-Planck-Institut für Kernphysik, Heidelberg, GERMANY
|
| Quelle/Jahr | Physical Review A: 90 (2014), 5, 052704-1 - 052704-12 |
| ISSN | 1050-2947 |
| DOI | |
| Verlag | College Park, Md.: American Physical Society |
| Klassifikationscode | PACS: 34.80.Lx ; PACS: 32.30.Rj ; PACS: 52.25.Os |
| Zusammenfassung | Intershell, resonant electronic recombination is studied experimentally in an electron-beam ion trap for O-like Si6+ to He-like Si12+ ions at plasma temperatures in the megakelvin range similar to those found in the solar radiative zone and is compared to extended multiconfiguration Dirac-Fock and relativistic configuration-interaction predictions. For this low-Z ion, the higher-order electronic recombination processes are comparable in strength to the first-order one. The ratio of trielectronic to dielectric recombination for B-like species agrees well with predictions, whereas for C-like ions the measured value is only half as large. This difference is explained by the influence of metastable states populated in the recombining plasma. |
Zitierung
Baumann, T. M., Harman, Z., Stark, J., Beilmann, C., Liang, G., Mokler, P. H., Ullrich, J., & Crespo López-Urrutia, J. R. (2014). Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions. Physical Review A, 90(5), 052704-1–052704-12. https://doi.org/10.1103/physreva.90.052704