Platinum thin film resistors with Cr under- and overlayer for Nb/AI2O3/Nb technology

Dolata, Ralf; Balashov, D.

doi:https://doi.org/10.1016/s0921-4534(97)01800-5

Zugriffsnummer	33116
Dokumenttyp	Zeitschriftenartikel
Sprache	Englisch
Titel	Platinum thin film resistors with Cr under- and overlayer for Nb/AI₂O₃/Nb technology
Autor(in); Institution	Dolata, Ralf; 2.401, Einzelelektronentunneln, PTB-Braunschweig Balashov, D.; IREE Russian Academy of Sciences, Moscow, RUSSIA
Quelle/Jahr	Physica C: 295 (1997), 3-4, 247 - 250
ISSN	0921-4534
DOI	https://doi.org/10.1016/s0921-4534(97)01800-5
Verlag	Amsterdam: North-Holland
Klassifikationscode	PACS: 73.61.At ; PACS: 81.15.Cd ; PACS: 85.25.Na
Freie Schlagworte	Thin film resistors ; Nb/AI₂O₃/Nb technology
Zusammenfassung	The fabrication of rapid single flux quantum (RSFQ) circuits requires non-hysteretic Josephson junctions with low spread in critical currents. Usually well established Nb/AI₂O₃/Nb junctions are used, externally shunted by thin film resistors to provide the necessary damping. Different metals, e.g. Pd, Rh, Pt, Cr and Cr/Pt/Cr multilayers are investigated with respect to their use as thin film resistors in the Nb/AI₂O₃/Nb technology in a simple and reliable IC process.

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Dolata, R. & Balashov, D. (1997). Platinum thin film resistors with Cr under- and overlayer for Nb/AI₂O₃/Nb technology. Physica C, 295(3-4), 247–250. https://doi.org/10.1016/s0921-4534(97)01800-5

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