Zugriffsnummer 32029
Dokumenttyp Konferenzartikel in Zeitschrift
Sprache Englisch
Titel Approaches to calculate the dielectric function of ZnO around the band gap
Autor(in); Institution
Agocs, E.; Institute for Technical Physics and Materials Science (MFA), Research Center for Natural Sciences, Budapest, HUNGARY; Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Veszprem, HUNGARY
Fodor, B.; Institute for Technical Physics and Materials Science (MFA), Research Center for Natural Sciences, Budapest, HUNGARY; Faculty of Science, University of Pécs, HUNGARY
Pollakowski, Beatrix; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Beckhoff, Burkhard; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Nutsch, Andreas; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Jank, M.; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Petrik, P.; Institute for Technical Physics and Materials Science (MFA), Research Center for Natural Sciences, Budapest, HUNGARY; Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Veszprem, HUNGARY
Quelle/Jahr Thin Solid Films: 571 (2014), 3, 684 - 688
ISSN 0040-6090
DOI
Verlag Amsterdam [u.a.]: Elsevier
Konferenzangaben 6th International Conference on Spectroscopic Ellipsometry (ICSE-VI), Kyoto, 26-31 May 2013, Japan
Freie Schlagworte Spectroscopic Ellipsometry ; ZnO ; dielectric function ; parametric dipersion model
Zusammenfassung Being one of the most sensitive methods for optical thin film metrology ellipsometry is widely used for the characterization of zinc oxide(ZnO), a key material for optoelectronics, photovoltaics, printable electronics and in a range of critical applications. The dielectric function of ZnO has a special feature around the band gap dominated by a relatively sharp absorption feature and an excitonic peak. In this work we summarize and compare direct (point-bypoint) and parametric approaches for the description of the dielectric function. We also investigate how the choice of the wavelength range influences the result, the fit quality and the sensitivity. Results on ZnO layers prepared by sputtering are presented.

Zitierung

Agocs, E., Fodor, B., Pollakowski, B., Beckhoff, B., Nutsch, A., Jank, M., & Petrik, P. (2014). Approaches to calculate the dielectric function of ZnO around the band gap. Thin Solid Films, 571(3), 684–688. https://doi.org/10.1016/j.tsf.2014.03.028

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