| Zugriffsnummer | 31994 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Depth-dependent structural changes in PS‑b‑P2VP thin films induced by Annealing |
| Autor(in); Institution |
Wernecke, Jan; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Okuda, Hiroshi; Department of Materials Science and Engineering, Kyoto University, Kyoto, JAPAN
Ogawa, Hiroki; Japan Synchrotron Radiation Research Institute, Hyogo, JAPAN
Siewert, Frank; Institute Nanometre Optics and Technology, Helmholtz Zentrum Berlin (HZB), Berlin, GERMANY
Krumrey, Michael; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Macromolecules: 47 (2014), 16, 5719 - 5727 |
| ISSN | 0024-9297 (PRINT) ; 1520-5835 (ONLINE) |
| DOI | |
| Verlag | Washington, DC: American Chemical Society |
| Zusammenfassung | GISAXS measurements with scattering contrast matching at the silicon K-edge were performed to obtain depthresolved information on structural changes in as-spun and annealed PS-b-P2VP thin films on silicon substrate. Depthsensitive GISAXS measurements of the as-spun film revealed a vertically oriented fingerprint-like lamellar structure with a microphase separation distance of 59 nm throughout the entire film. The annealed film showed a significantly reduced ordering at the surface to a depth of about 30 nm, while the order is preserved toward the substrate interface. At the same time, no significant transition to horizontal ordering was observed after 2 h of annealing at 105 °C. We conclude that the transition process from vertical to horizontal ordering is incomplete after the annealing time and remains in a frozen state at room temperature. Moreover, the transition starts as a disorder increase at the top of the film, which indicates a higher mobility of the coalescing microdomains at the surface. |
