| Zugriffsnummer | 31313 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Characterization of semiconductors using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy |
| Autor(in); Institution |
Hermann, Peter; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Hoehl, Arne; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Ulrich, Georg; Physikalische und Theoretische Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Berlin, GERMANY
Fleischmann, Claudia; Imec, Leuven, BELGIUM
Hermelink, Antje; Robert Koch Institut, Berlin, GERMANY
Kästner, Bernd; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Patoka, Piotr; Physikalische und Theoretische Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Berlin, GERMANY
Hornemann, Andrea; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Beckhoff, Burkhard; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Rühl, Eckart; Physikalische und Theoretische Chemie, Institut für Chemie und Biochemie, Freie Universität Berlin, Berlin, GERMANY
Ulm, Gerhard; 7, Temperatur und Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Optics Express: 22 (2014), 15, 17948 - 17958 |
| Availability | [online only] |
| ISSN | 1094-4087 |
| DOI | |
| Verlag | Washington, DC: Optical Society of America |
| Klassifikationscode | OCIS: 120.0120 ; OCIS: 240.0240 ; OCIS: 300.0300 ; OCIS: 310.6860 ; OCIS: 180.4243 |
| Zusammenfassung | We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial Resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of nearfield spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2. |
| Kostenfreier Zugang | Open Access Gold |
Zitierung
Hermann, P., Hoehl, A., Ulrich, G., Fleischmann, C., Hermelink, A., Kästner, B., Patoka, P., Hornemann, A., Beckhoff, B., Rühl, E., & Ulm, G. (2014). Characterization of semiconductors using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy. Optics Express, 22(15), 17948–17958. https://doi.org/10.1364/oe.22.017948