| Zugriffsnummer | 30677 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Magneto-transport properties of exfoliated graphene on GaAs |
| Autor(in); Institution |
Woszczyna, Miroslaw; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Friedemann, Miriam; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
|
| Quelle/Jahr | Journal of Applied Physics: 110 (2011), 4, 043712-1 - 043712-6 |
| ISSN | 0021-8979 (PRINT) ; 1089-7550 (ONLINE) |
| DOI | |
| Verlag | Melville, NY: AIP Publishing |
| Zusammenfassung | We studied the magneto-transport properties of graphene prepared by exfoliation on a III–V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier density is obtained, and the typical Dirac resistance characteristic is observed despite the limited height of the multilayer barrier as compared to the usual SiO 2 oxide barrier on doped silicon. In a magnetic field, weak localization effects as well as the quantum Hall effect of a graphene monolayer are studied. |
