Zugriffsnummer 30616
Dokumenttyp Konferenzartikel
Peer Review unbekannt
Sprache Englisch
Titel The growth of the oxide layer on silicon spheres and its influence on their mass stability
Autor(in); Institution
Borys, Michael; 1.1, Masse, PTB-Braunschweig
Mecke, Michael; 1.1, Masse, PTB-Braunschweig
Kuetgens, Ulrich; 4.3, Quantenoptik und Längeneinheit, PTB-Braunschweig
Busch, Ingo; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Krumrey, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Fuchs, Peter; METAS, Bern, SWITZERLAND
Marti, Kilian; METAS, Bern, SWITZERLAND
Bettin, Horst; 3.4, Physikalische Chemie, PTB-Braunschweig
Quelle/Jahr Joint IMEKO International TC3, TC5 and TC22 Conference 2014:(2014)
Availability [USB-Stick] ; file name: TC3-134-317-3-DR.pdf
Konferenzangaben IMEKO 2014: TC3, TC5 and TC22 Conference, Cape Town, 03-05, February, 2014, Republic of South Africa
Freie Schlagworte New SI ; Kilogram ; Avogardro project ; Si spheres ; Mass stability ; silicon oxide
Zusammenfassung First results of gravimetric measurements of the growth of the oxide layer on single-crystal silicon spheres are presented and compared with a theoretical model and with measurements of the surface layer based on X-ray and ellipsometric methods. From the results, conclusions can be drawn about the quantitative influence of the growth of the oxide layer on the mass stability of silicon spheres.

Zitierung

Borys, M., Mecke, M., Kuetgens, U., Busch, I., Krumrey, M., Fuchs, P., Marti, K., & Bettin, H. (2014). The growth of the oxide layer on silicon spheres and its influence on their mass stability. IMEKO 2014: TC3, TC5 and TC22 Conference, Cape Town, 03-05, February, 2014, Republic of South Africa.

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