| Zugriffsnummer | 29653 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications |
| Autor(in); Institution |
Prasai, Deepak; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, GERMANY
John, Wilfred; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, GERMANY
Weixelbaum, Leonhard; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, GERMANY
Krüger, Olaf; Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, GERMANY
Wagner, Günter; Leibniz-Institut für Höchstfrequenztechnik, Berlin, GERMANY
Sperfeld, Peter; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Nowy, Stefan; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Friedrich, Dirk; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Winter, Stefan; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Weiss, Tilman; sglux GmbH, Berlin, GERMANY
|
| Quelle/Jahr | Journal of Materials Research: 28 (2013), 01, 33 - 37 |
| ISSN | 0884-2914 (PRINT) ; 2044-5326 (ONLINE) |
| DOI | |
| Verlag | Cambridge: Cambridge Univ. Press |
| Zusammenfassung | Highly efficient polytype 4H silicon carbide (4H-SiC) p–n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm²). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm²) and a medium-pressure mercury discharge lamp (17 mW/cm²) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H–SiC) p–n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications. |
Zitierung
Prasai, D., John, W., Weixelbaum, L., Krüger, O., Wagner, G., Sperfeld, P., Nowy, S., Friedrich, D., Winter, S., & Weiss, T. (2013). Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications. Journal of Materials Research, 28(01), 33–37. https://doi.org/10.1557/jmr.2011.216