Zugriffsnummer 29353
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Status of EUV reflectometry at PTB
Autor(in); Institution
Laubis, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Barboutis, Annett; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Biel, Martin; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Buchholz, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Dubrau, Benjamin; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Fischer, Andreas; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Hesse, Anne; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Puls, Jana; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Stadelhoff, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Quelle/Jahr Extreme ultraviolet (EUV) lithography IV:(2013), 867921-1 - 867921-12
Schriftenreihe Proceedings of SPIE: 8679
Herausgeber(in)
Nailleau, Patrick
ISSN 0277-786X
ISBN 978-081-949-461-0
DOI
Verlag Bellingham, Wash.: SPIE
Konferenzangaben Advanced Lithography 2013, San José, California, 24-28, February, 2013, USA
Freie Schlagworte EUV ; at-wavelength ; reflectometry ; radiometry ; metrology
Zusammenfassung With several pre-production EUV tools already in the field, the development of EUV Lithography has gained momentum and the first production tools are scheduled for delivery in 20131. Consequently, the demand for EUV radiometry has grown as well with respect to volume and variety of the measurement requirements. Building on almost two decades of experience, PTB offers a wide range of actinic EUV measurements, like reflectance and transmittance, to characterize optical elements and sensitivity measurements to characterize detection devices. Based on these core competences, new applied measurements can be offered. Diffusely scattered light can be used to assess surface roughness (PSD) in the otherwise difficult to measure spatial frequency region of 1 μm to 10 μm. PTB performs EUV metrology at two dedicated complementary beamlines covering the wavelength range from 0.65 nm to 30 nm with particularly well-collimated radiation and the range from 5 nm to 50 nm with higher radiant power, variable degree of polarization and adjustable spot size on the sample. Both beamlines are optimized to achieve temporally stable normalized radiant power and excellent wavelength reproducibility at high spectral purity with out-of-band radiation in the range of 10-3 relative, as a prerequisite for low measurement uncertainties and long-term reproducibility. We present an updated overview of our capabilities with a focus on the long-term stability of our instrumentation and methods.

Zitierung

Laubis, C., Barboutis, A., Biel, M., Buchholz, C., Dubrau, B., Fischer, A., Hesse, A., Puls, J., Stadelhoff, C., Soltwisch, V., & Scholze, F. (2013). Status of EUV reflectometry at PTB. Advanced Lithography 2013, San José, California, 24-28, February, 2013, USA. https://doi.org/10.1117/12.2011529

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