| Zugriffsnummer | 28906 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions |
| Autor(in); Institution |
Ben Hamida, Aymen; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Bergmann, Florian; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Journal of Applied Physics: 113 (2013), 8, 083702-1 - 083702-5 |
| ISSN | 0021-8979 (PRINT) ; 1089-7550 (ONLINE) |
| DOI | |
| Verlag | Melville, NY: American Institute of Physics |
| Klassifikationscode | PACS: 85.75.-d |
| Freie Schlagworte | current density ; gallium arsenide ; III-V semiconductors ; magnetoelectronics ; manganese compounds ; semimagnetic semiconductors ; tunnelling magnetoresistance |
| Zusammenfassung | GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-to-plane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetoresistance (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate determination of resistance area products and spin torque critical current densities from perpendicular-to-plane magnetotransport experiments on MTJ pillar structures. |
Zitierung
Ben Hamida, A., Bergmann, F., Pierz, K., & Schumacher, H. W. (2013). Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions. Journal of Applied Physics, 113(8), 083702-1–083702-5. link.aip.org/link/doi/10.1063/1.4793086