| Zugriffsnummer | 28764 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Supply voltage dependent on-chip single event transient pulse shape measurements in 90-nm bulk CMOS under alpha irradiation |
| Autor(in); Institution |
Hofbauer, Michael; Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna, AUSTRIA
Schweiger, Kurt; Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna, AUSTRIA
Zimmermann, Horst; Vienna University of Technology, Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna, AUSTRIA
Giesen, Ulrich; 6.4, Ionenbeschleuniger und Referenzstrahlungsfelder, PTB-Braunschweig
Langner, Frank; 6.4, Ionenbeschleuniger und Referenzstrahlungsfelder, PTB-Braunschweig
Schmid, Ulrich; Vienna University of Technology, Institute of Computer Engineering, Vienna, AUSTRIA
Steininger, Andreas; Vienna University of Technology, Institute of Computer Engineering, Vienna, AUSTRIA
|
| Quelle/Jahr | IEEE Transactions on Nuclear Science: 60 (2013), 4, 2640 - 2646 |
| ISSN | 0018-9499 |
| DOI | |
| Verlag | New York, NY: IEEE |
| Freie Schlagworte | single event transient ; alpha irradiation ; 90 nm CMOS ; supply voltage dependence ; sense amplifier ; analog on-chip measurement ; microbeam |
| Zusammenfassung | Direct on-chip pulse shape measurements of single event transients (SETs) in a single inverter in 90-nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB) in Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights and widths could be observed. |
Zitierung
Hofbauer, M., Schweiger, K., Zimmermann, H., Giesen, U., Langner, F., Schmid, U., & Steininger, A. (2013). Supply voltage dependent on-chip single event transient pulse shape measurements in 90-nm bulk CMOS under alpha irradiation. IEEE Transactions on Nuclear Science, 60(4), 2640–2646. https://doi.org/10.1109/tns.2013.2245679