| Zugriffsnummer | 28723 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Characterization of ZnO structures by optical and x-ray methods |
| Autor(in); Institution |
Petrik, Peter; MTA-MFA, Budapest, HUNGARY
Pollakowski, Beatrix; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Zakel, Sabine; 3.1, Metrologie in der Chemie, PTB-Braunschweig
Gumprecht, Thomas; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Beckhoff, Burkhard; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Lemberger, Marting; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Labadi, Z.; Institute for Technical Physics and Materials Science (MFA), Research Center for Natural Sciences, Budapest, HUNGARY
Baji, Z.; Institute for Technical Physics and Materials Science (MFA), Research Center for Natural Sciences, Budapest, HUNGARY
Jank, M.; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Nutsch, Andreas; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
|
| Quelle/Jahr | Applied Surface Science: 281 (2013), 123 - 128 |
| ISSN | 0169-4332 (PRINT) ; 0169-4332 (ONLINE) |
| DOI | |
| Verlag | Amsterdam [u.a.]: Elsevier |
| Konferenzangaben | EMRS 2012 fall meeting, Warsaw, 17-21, September, 2012, Poland |
| Freie Schlagworte | Zinc oxide ; spectroscopic ellipsometry ; X-ray |
| Zusammenfassung | ZnO thin lms doped by Ga and In as well as multilayer structures of ZnO/Al2O3 have been investigated by X-ray fluorescence, Raman spectrometry, spectroscopic ellipsometry and vacuum ultra violet reflectometry. Systematic changes in the optical properties have been revealed even for Gaconcentrations below 1 %. The Raman active phonon mode of Ga doping at 580 cm-1 shows a correlation with the Ga concentration. Optical models with surface nanoroughness correction and dierent parameterizations of the dielectric function have been investigated. There was a good agreement between the dielectric functions determined by the Herzinger-Johs polynomial parameterization and by direct inversion. It has been shown that the correction of the nanoroughness signicantly in uences the accuracy of the determination of the layer properties. The band gap and peak amplitude of the imaginary part of the dielectric function corresponding to the excitonic transition changes systematically with the Ga-content and with annealing even for low concentrations. |
Zitierung
Petrik, P., Pollakowski, B., Zakel, S., Gumprecht, T., Beckhoff, B., Lemberger, M., Labadi, Z., Baji, Z., Jank, M., & Nutsch, A. (2013). Characterization of ZnO structures by optical and x-ray methods. Applied Surface Science, 281, 123–128. https://doi.org/10.1016/j.apsusc.2012.12.035