| Zugriffsnummer | 28643 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Graphene p-n junction arrays as quantum-Hall resistance standards |
| Autor(in); Institution |
Woszczyna, Miroslaw; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Friedemann, Miriam; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Dziomba, Thorsten; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
|
| Quelle/Jahr | Applied Physics Letters: 99 (2011), 2, 022112-1 - 022112-3 |
| ISSN | 0003-6951 (PRINT) ; 1077-3118 (ONLINE) |
| DOI | |
| Verlag | Melville, NY: American Institute of Physics |
| Klassifikationscode | PACS: 72.80.Vp ; PACS: 73.40.Lq |
| Freie Schlagworte | electrical resistivity ; graphene ; p-n junctions ; quantum Hall effect |
| Zusammenfassung | We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few microamperes. |
