| Zugriffsnummer | 28615 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment |
| Autor(in); Institution |
Lotkhov, Sergey V.; 2.4, Quantenelektronik, PTB-Braunschweig
Zorin, Alexander B.; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | Journal of Physics: Conference Series: 400 (2012), Pt. 4, 042040-1 - 042040-5 |
| ISSN | 1742-6596 |
| DOI | |
| URL | |
| Verlag | Bristol: IOP |
| Konferenzangaben | 26th International Conference on Low Temperature Physics (LT26), Beijing, 10-17, August, 2011, China |
| Klassifikationscode | PACS: 74.25.Fy ; PACS: 84.32.Ff ; PACS: 73.50.Gr |
| Freie Schlagworte | Superconductivity ; Electronics and devices |
| Zusammenfassung | Dissipative properties of the electromagnetic environment as well as on-chip RC ltering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local high-ohmic resistor increased the hold time of the trap by up to two orders of magnitude. A strong effect of on-chip noise ltering was observed for dierent on-chip geometries. The obtained results are promising for realization of the current standard on the basis of the S-N hybrid turnstile. |
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