| Zugriffsnummer | 28526 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Silicon carbonitride nanolayers - Synthesis and chemical characterization |
| Autor(in); Institution |
Hoffmann, P. S.; Department of Materials Science, Technische Universität Darmstadt, Darmstadt, GERMANY
Fainer, N. I.; Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, RUSSIA
Baake, O.; Department of Materials Science, Technische Universität Darmstadt, Darmstadt, GERMANY
Kosinova, M. L.; Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, RUSSIA
Rumyantsev, Y. M.; Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, RUSSIA
Trunova, V. A.; Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, RUSSIA
Klein, A.; Department of Materials Science, Technische Universität Darmstadt, Darmstadt, GERMANY
Pollakowski, Beatrix; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Beckhoff, Burkhard; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Ensinger, W.; Department of Materials Science, Technische Universität Darmstadt, Darmstadt, GERMANY
|
| Quelle/Jahr | Thin Solid Films: 520 (2012), 5906 - 5913 |
| ISSN | 0040-6090 |
| DOI | |
| Verlag | Amsterdam [u.a.]: Elsevier |
| Freie Schlagworte | Silicon carbonitrides ; Chemical vapor deposition ; Speciation ; Fourier transform infrared spectroscopy ; X-ray photoelectron spectroscopy ; Energy dispersive X-ray spectrometry ; Total reflection X-ray fluorescence ; Near edge X-ray absorption fine structure |
| Zusammenfassung | SiCxNy thin films were produced by plasma-enhanced chemical vapor deposition and characterized by ellipsometry, Fourier transform infrared and Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, aswell as, by near-edge X-ray absorption fine structuremeasurements in total-reflection X-ray fluorescence geometry. The temperature of synthesis was varied between 100 °C and 800 °C, the precursors hexamethyldisilazane or hexamethylcyclotrisilazane were used with an addition of N2, He, and NH'3, respectively. The composition of the productswas determined to be constant in Siwith about 20 at.%, whereas the sumof C and N results in 80 at.% (each varying between 20 and 60 at.%). Consequently, it can be stated, that in the produced silicon carbonitride a network of Si is built with SiSiand Sibridges. The comparison of the chemical composition and of the physical properties shows for the samples produced with He or N2, respectively (without NH3) that the refractive index and the absorption coefficient are increasing with an increasing content of carbon in the final formula SiC4−nNn (with n=1, 2, or 3). |
Zitierung
Hoffmann, P. S., Fainer, N. I., Baake, O., Kosinova, M. L., Rumyantsev, Y. M., Trunova, V. A., Klein, A., Pollakowski, B., Beckhoff, B., & Ensinger, W. (2012). Silicon carbonitride nanolayers - Synthesis and chemical characterization. Thin Solid Films, 520, 5906–5913. https://doi.org/10.1016/j.tsf.2012.04.082