| Zugriffsnummer | 28447 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | X-Ray induced depth profiling of ion implantations into various semiconductor materials |
| Autor(in); Institution |
Hönicke, Philipp; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Müller, Matthias; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
Beckhoff, Burkhard; 7.2, Kryophysik und Spektrometrie, PTB-Berlin
|
| Quelle/Jahr | Solid State Phenomena: 195 (2012), 274 - 276 |
| ISSN | 1012-0394 (PRINT) ; 1662-9779 (ONLINE) |
| DOI | |
| Verlag | Zürich: Trans Tech Publications |
| Freie Schlagworte | Grazing Incidence X-Ray Fluorescence, ; GIXRF ; XSW ; ion implantations ; depth profiling |
| Zusammenfassung | The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes. Secondary ion mass spectrometry (SIMS) is a well-established technique and numerous efforts have been made to apply it to USJ characterization. Due to various effects, especially in the first few nanometers, SIMS leads to increased uncertainties in the profile shape and the determined doses [1]. Grazing Incidence X-Ray Fluorescence (GIXRF) analysis has the potential to support calibration procedures of SIMS for novel material combinations. In the present work, an X-ray induced approach for the characterization of ion implantations by using GIXRF is presented and compared with SIMS and other methods. |
