Zugriffsnummer 28412
Dokumenttyp Zeitschriftenartikel Open Access Gold
Peer Review mit Peer Review
Sprache Englisch
Titel Broadband transitions for membrane-based coplanar waveguides on highly-conductive silicon substrates
Autor(in); Institution
Rohland, Martina; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Arz, Uwe; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Kuhlmann, Karsten; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Büttgenbach, Stephanus; TU Braunschweig, Institut für Mikrotechnik, Braunschweig, GERMANY
Quelle/Jahr Kleinheubacher Berichte 2011. Advances in Radio Science: 10 (2012), 13 - 28
Availability [online only]
ISSN 1684-9973
URL
Verlag Göttingen: Copernicus Publications
Zusammenfassung We present a transition from a contact structure built on highly-conductive silicon to a coplanar waveguide (CPW) fabricated in membrane technology. Test structures were fabricated and measured. The silicon-to-membrane transition is suitable for on-wafer probing and provides less than −10 dB measured reflection in the frequency range from 1 to 110 GHz. Measured and calculated values of the propagation constant of the membrane CPW agree well in the entire frequency range.
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Rechteinformation CC BY 3.0 ; Creative Commons Attribution 3.0 License

Zitierung

Rohland, M., Arz, U., Kuhlmann, K., & Büttgenbach, S. (2012). Broadband transitions for membrane-based coplanar waveguides on highly-conductive silicon substrates. Advances in Radio Science, 10, 13–28.

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