| Zugriffsnummer | 28368 |
| Dokumenttyp | Buchartikel |
| Sprache | Englisch |
| Titel | NAND flash technology |
| Autor(in); Institution |
Beug, Marc Florian; 2.1, Gleichstrom und Niederfrequenz, PTB-Braunschweig
|
| Quelle/Jahr | Inside Solid State Drives (SSDs):(2013), 79 - 126 |
| Schriftenreihe | Springer series in advanced microelectronics: 37 |
| Herausgeber(in) |
Micheloni, Rino
|
| ISBN | 978-94-007-5145-3 ; 978-94-007-5146-0 |
| Verlag | Dordrecht [u.a.]: Springer |
| Freie Schlagworte | Floating gate NAND ; charge trapping cells ; non-volatile memory ; capacitive coupling model ; program saturation ; erase saturation ; self-boosted program inhibit ; program disturb ; pass disturb ; pass window ; charge retention ; program/erase cycling endurance ; memory cell scaling ; cell cross-coupling ; random telegraph noise ; optical litho gap ; double patterning ; quadruple patterning ; CD variations ; 3D memory cell integration |
| Zusammenfassung | This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non-volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell principles in future 3D memory approaches. |
