| Zugriffsnummer | 28189 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Magnetic and transport properties of as-grown and annealed GaMnAs thick layers |
| Autor(in); Institution |
Ben-Hamida, Aymen; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Liebing, Niklas; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Serrano-Guisan, Santiago; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Sievers, Sibylle; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Journal of the Magnetics Society of Japan: 36 (2012), 1/2, 49 - 53 |
| ISSN | 0285-0192 (PRINT) ; 1880-4004 (ONLINE) |
| Verlag | Tokyo: |
| Freie Schlagworte | GaMnAs ; post-growth annealing ; anisotropic magnetoresistance ; planar Hall effect |
| Zusammenfassung | We studied post-growth annealing of GaMnAs thin films with large film thickness t up to 100 nm. Our results show that for films of up to t = 100 nm comparable values of Curie temperature Tc and saturation magnetization Ms can be obtained as for t = 25 nm. Hence, the out-diffusion based annealing process is not thickness limited. Furthermore, anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) measurements of as-grown and annealed samples are carried out to characterize the magnetic anisotropies of the different films. |
