| Zugriffsnummer | 27430 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Zn doped GaN for single-photon emission |
| Autor(in); Institution |
Behrends, Arne; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Ledig, Johannes; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Al-Suleiman, Mohamed Aid Mansur; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Peters, Silke; 4.5, Optische Technologien, PTB-Braunschweig
Racu, Ana Maria; 4.5, Optische Technologien, PTB-Braunschweig
Schmunk, Waldemar; 4.5, Optische Technologien, PTB-Braunschweig
Hofer, Helmuth; 4.5, Optische Technologien, PTB-Braunschweig
Kück, Stefan; 4.5, Optische Technologien, PTB-Braunschweig
Bakin, Andrey; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
Waag, Andreas; TU Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY
|
| Quelle/Jahr | Physica Status Solidi C: 9 (2012), 3/4, 1024 - 1027 |
| ISSN | 1610-1634 (PRINT) ; 1610-1642 (ONLINE) |
| DOI | |
| Verlag | Weinheim: Wiley |
| Freie Schlagworte | GaN:Zn ; single-Photon emission ; MOCVD |
| Zusammenfassung | In this work we report on the optical investigation of Zn doped GaN films fabricated by metal organic chemical vapor deposition. The samples show bright emission in the blue spectral range around 2.9 eV when Si codoping is provided. This emission is suggested to be used for single-photon emission, thus the density of the Zn-Si pairs was drastically reduced leading to a decrease of the blue luminescence. For electrically excited single-photon sources these Zn-Si pairs have to be incorporated into LEDs, therefore we fabricated GaN-based nano-LEDs which show electroluminescence at 430 nm. |
