| Zugriffsnummer | 27191 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | High performance silicon-based Extreme Ultraviolet (EUV) radiation detector for industrial application |
| Autor(in); Institution |
Shi, L.; Delft University of Technology, Delft, THE NETHERLANDS
Sarubbi, F.; Delft University of Technology, Delft, THE NETHERLANDS
Nihtianov, S.N.; Delft University of Technology, Delft, THE NETHERLANDS; ASML Netherlands B.V., Veldhoven, THE NETHERLANDS
Nanver, L.K.; Delft University of Technology, Delft, THE NETHERLANDS
Scholtes, T.L.M.; Delft University of Technology, Delft, THE NETHERLANDS
Scholze, Frank; 7.2, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Proceedings of IECON 2009: 3 (2009), 1877 - 1882 |
| ISSN | 1553-572X |
| ISBN | 978-1-4244-4648-3 ; 978-1-4244-4650-6 |
| DOI | |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | IECON 2009: 35th Annual Conference of the IEEE Industrial Electronics Society, Porto, 3-5, November, 2009, Portugal |
| Freie Schlagworte | Dark current ; extrem-ultraviolet (EUV) radiation ; photodiodes ; radiation detectors ; response time ; responsivity ; ultrashallow junctions |
| Zusammenfassung | Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and extremely ultra shallow junctions that significantly enhance the sensitivity to UV radiation with respect to commercial state-of-the-art detectors, as confirmed by near theoretical responsivity (0.266 A/W, at 13.5 nm radiation wavelength). Outstanding performance has also been achieved in terms of extremely low dark current (( 50 pA, at a reverse bias of 10 V) and pulsed response time (( 100 ns) for 0.1 cm2 large area devices. In addition, the fabricated photodiodes exhibit negligible degradation to high-dose radiation exposure. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity, and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in industrial applications based on EUV radiation, such as nextgeneration 13.5 nm wavelength lithography. |
Zitierung
Shi, L., Sarubbi, F., Nihtianov, S., Nanver, L., Scholtes, T., & Scholze, F. (2009). High performance silicon-based Extreme Ultraviolet (EUV) radiation detector for industrial application. IECON 2009: 35th Annual Conference of the IEEE Industrial Electronics Society, Porto, 3-5, November, 2009, Portugal. https://doi.org/10.1109/iecon.2009.5414855