| Zugriffsnummer | 27142 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Investigation of serial quantum Hall arrays as a quantum resistance standard |
| Autor(in); Institution |
Könemann, Jens; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Leicht, Christoph; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Pesel, Eckart; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
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| Quelle/Jahr | Horiba International Conference - the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology. Journal of Physics: Conference Series: 334 (2011), 1 - 4 |
| Artikelnummer | 012017 |
| ISSN | 1742-6588 (PRINT) ; 1742-6596 (ONLINE) |
| DOI | |
| Verlag | Bristol: IOP Publ. |
| Konferenzangaben | 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, Fukuoka, 01-06, August, 2010, Japan |
| Klassifikationscode | PACS: 73.43.Fj ; PACS: 72.20.My ; PACS: 85.40.Ls ; PACS: 73.40.Kp |
| Freie Schlagworte | 2-D electron gases (2-DEG) ; Bars ; Current measurement ; Electrical resistance measurement ; Hall effect ; Resistance ; Resistors ; Standards ; Voltage measurement ; quantum Hall resistance standard ; quantum effect semiconductor devices |
| Zusammenfassung | In this work, we test the feasibility of a resistance standard based on a serial array of ten lithographically interconnected quantum Hall bars based on an Al(Ga)As heterostructure. Our investigation involves a novel multiple layer process for the fabrication of our samples which allows to realize a thin SiO2 insulations by means of a lift-off process. Additionally, we have performed preliminary precision measurements of the i=2 Hall plateau in order to characterize the metrological properties of our samples. |
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