| Zugriffsnummer | 27006 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Stochastic modelling and rigorous simulation of line roughness effects for EUV scatterometry [poster] |
| Autor(in); Institution |
Gross, Hermann; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Henn, Mark-Alexander; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Rathsfeld, A.; Wierstrass Institute for Applied Analysis and Stochastics, Berlin, GERMANY
Bär, Markus; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
|
| Quelle/Jahr | 1st EOS Topical Meeting on Micro- and Nano-Optoelectronic Systems:(2011), 2 S. |
| Availability | [CD-ROM] ; file name: bremen2011-010-Gross Hermann - 4731.pdf |
| ISBN | 978-3-00-033711-6 ; 978-3-00-033712-3 |
| Verlag | Hannover: EOS |
| Konferenzangaben | 1st EOS Topical Meeting on Micro- and Nano-Optoelectronic Systems, Bremen, 7-9, December, 2011, Germany |
| Freie Schlagworte | Scatterometry ; line edge roughness (LER) ; line width rougness (LWR) ; Maxwell solver |
| Zusammenfassung | The impact of line edge and line width roughness (LER/LWR) on diffraction patterns measured by scatterometry is simulated rigorously for a typical EUV line-space structure. Repeated calculations for large FEM computation domains with stochastically chosen line and space widths are applied to investigate the influence of aperiodic random perturbations on the diffracted efficiencies. |
