| Zugriffsnummer | 26594 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Quantum Hall resistance standards with good quantization at high electron mobilities |
| Autor(in); Institution |
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Götz, Martin; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Pesel, Eckart; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | IEEE Transactions on Instrumentation and Measurement: 60 (2011), 7, 2455 - 2461 |
| ISSN | 0018-9456 |
| DOI | |
| Verlag | New York, NY: IEEE |
| Konferenzangaben | 2010 Conference on Precision Electromagnetic Measurements, CPEM 2010, Daejeon, 13-18, June, 2010, South Korea |
| Freie Schlagworte | 2-D electron systems ; Electrical quantum standards ; integer quantum Hall effect (QHE) ; molecular beam epitaxy (MBE) growth ; quantum Hall resistance (QHR) standard |
| Zusammenfassung | We study the magnetotransport properties and Hall resistance quantization in a set of AlGaAs/GaAs heterostructures grown in a high-mobility molecular beam epitaxy system. The data show that, with reduced spacer layer width, the electron mobility in such heterostructures can be reduced to moderate mobility values of ~6 × 105 cm²/(V · s). We find good resistance quantization, allowing for a metrological application not only for a quantum Hall device with moderate electron mobility but also for a high-mobility device with an electron mobility of 2.2 × 106 cm²/(V · s). |
Zitierung
Pierz, K., Götz, M., Pesel, E., Ahlers, F. J., & Schumacher, H. W. (2011). Quantum Hall resistance standards with good quantization at high electron mobilities. IEEE Transactions on Instrumentation and Measurement, 60(7), 2455–2461. https://doi.org/10.1109/tim.2010.2100651