| Zugriffsnummer | 26232 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications |
| Autor(in); Institution |
Kähler, Julian; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Doering, Lutz; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Merzsch, Stephan; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Stranz, Andrej; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Waag, Andreas; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
Peiner, Erwin; TU Braunschweig, Institut für Halbleitertechnik, Braunschweig, GERMANY
|
| Quelle/Jahr | Smart Sensors, Actuators, and MEMS V:(2011), 806603-1 - 806603-8 |
| Schriftenreihe | Proceedings of SPIE: 8066 |
| Herausgeber(in) |
Schmid, Ulrich
|
| ISBN | 978-0-8194-8655-4 |
| DOI | |
| Verlag | Bellingham, Wash.: IEEE |
| Konferenzangaben | SPIE Conference: Smart Sensors, Actuators, and MEMS V, Prague, 18-20, April 2011, Czech Republic |
| Freie Schlagworte | piezoresistive ; SOI ; high-temperature stable ; drilling ; vibration sensor ; measurement-while-drilling (MWD) |
| Zusammenfassung | For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-n junction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 ± 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling. |
Zitierung
Kähler, J., Doering, L., Merzsch, S., Stranz, A., Waag, A., & Peiner, E. (2011). Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications. SPIE Conference: Smart Sensors, Actuators, and MEMS V, Prague, 18-20, April 2011, Czech Republic. https://doi.org/10.1117/12.886855