| Zugriffsnummer | 25872 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | ALD on high mobility channels: engineering the proper gate stack passivation |
| Autor(in); Institution |
Sioncke, S.; IMEC, Leuven, BELGIUM
Lin, H.C.; IMEC, Leuven, BELGIUM
Adelmann, C.; IMEC, Leuven, BELGIUM
Brammertz, G.; IMEC, Leuven, BELGIUM
Delabie, A.; IMEC, Leuven, BELGIUM
Conard, A.; IMEC, Leuven, BELGIUM
Franquet, A.; IMEC, Leuven, BELGIUM
Caymax, M.; IMEC, Leuven, BELGIUM
Meuris, M.; IMEC, Leuven, BELGIUM
Struyf, H.; IMEC, Leuven, BELGIUM
De Gendt, S.; IMEC, Leuven, BELGIUM
Heyns, M.; IMEC, Leuven, BELGIUM
Fleischmann, C.; Instituut voor Kern- en Stralingsfysica and INPAC, Leuven, BELGIUM
Temst, K.; Instituut voor Kern- en Stralingsfysica and INPAC, Leuven, BELGIUM
Vantomme, A.; Instituut voor Kern- en Stralingsfysica and INPAC, Leuven, BELGIUM
Müller, Matthias; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Kolbe, Michael; 7.2, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Atomic layer deposition applications 6:(2010), 9 - 23 |
| Schriftenreihe | ECS Transactions: 33,2 |
| ISSN | 1938-5862 (PRINT) ; 1938-6737 (ONLINE) |
| ISBN | 978-1-566-77821-3 |
| DOI | |
| Verlag | Pennington, NJ: Electrochemical Soc. |
| Konferenzangaben | 218th ECS Meeting, Las Vegas, Nevada, 10-15, October, 2010, USA |
| Zusammenfassung | High mobility channels are currently being explored to replace the Si channel in future technology nodes. However, until now the promising bulk properties are very difficult to translate into reality due to a bad passivation of the interface between the gate stack and the substrate. In this paper we want to emphasize that gate stack passivation is the result of a complex interplay between the surface treatment and the ALD deposition. During ALD deposition on GaAs, the removal of surface oxides is observed. However, this effect does not lead to a good passivation. For Ge, the S-passivation of the interface is studied in combination with different high-κ. It is clear that the Ge/S/Al2O3 interface is superior to the Ge/S/ZrO2 interface. |
Zitierung
Sioncke, S., Lin, H., Adelmann, C., Brammertz, G., Delabie, A., Conard, A., Franquet, A., Caymax, M., Meuris, M., Struyf, H., De Gendt, S., Heyns, M., Fleischmann, C., Temst, K., Vantomme, A., Müller, M., Kolbe, M., & Beckhoff, B. (2010). ALD on high mobility channels: engineering the proper gate stack passivation. 218th ECS Meeting, Las Vegas, Nevada, 10-15, October, 2010, USA. https://doi.org/10.1149/1.3485237