| Zugriffsnummer | 25859 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS |
| Autor(in); Institution |
Lobo, L.; Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Oviedo, SPAIN
Fernández, B.; Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Oviedo, SPAIN
Pereiro, R.; Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Oviedo, SPAIN
Bordel, N.; Department of Physics, Faculty of Science, University of Oviedo, Oviedo, SPAIN
Demenev, E.; MiNALab, Center for Materials and Microsystems-Irst, Fondazione Bruno Kessler, Povo, Trento, ITALY
Giubertoni, D.; MiNALab, Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
Bersani, M.; cMiNALab, Center for Materials and Microsystems-Irst, Fondazione Bruno Kessler, Povo, Trento, ITALY
Hönicke, Philipp; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Sanz-Medel, A.; Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Oviedo, SPAIN
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| Quelle/Jahr | Journal of Analytical Atomic Spectrometry: 26 (2011), 3, 542 - 549 |
| ISSN | 0267-9477 (PRINT) ; 1364-5544 (ONLINE) |
| DOI | |
| Verlag | London: Royal Society of Chemistry (RSC) |
| Zusammenfassung | In very recent years particular effort is being devoted to the development of radiofrequency (rf) pulsed glow discharges (GDs) coupled to time of flight mass spectrometry (ToFMS) for depth profile qualitative analysis with nanometre depth resolution of technological materials. As such technique does not require sampling at ultra-high vacuum conditions it facilitates a comparatively high sample throughput, related to the reference technique secondary ion mass spectrometry (SIMS). In this work, pulsed rf-GD-ToFMS is investigated for the fast and sensitive characterization of boron and arsenic ultra low energy (ULE) implants on silicon. The possibility of using a simple multi-matrix calibration procedure is demonstrated for the first time for quantification of this type of samples and the validation of the proposed procedure has been carried out through the successful analysis of a multilayered sample with single and couple 11B delta markers. Results obtained with the proposed methodology for boron and arsenic ULE implants, prepared under different ion doses and ion energy conditions, have proved to be in good agreement with those achieved by using complementary techniques including SIMS and grazing incidence X-ray fluorescence. Thus, although further investigations are necessary for more critical evaluation of depth resolution, the work carried out demonstrates that rf-GD-ToFMS can be an advantageous tool for the analytical characterization of boron and arsenic ULE implants on silicon. |
Zitierung
Lobo, L., Fernández, B., Pereiro, R., Bordel, N., Demenev, E., Giubertoni, D., Bersani, M., Hönicke, P., Beckhoff, B., & Sanz-Medel, A. (2011). Quantitative depth profiling of boron and arsenic ultra low energy implants by pulsed rf-GD-ToFMS. Journal of Analytical Atomic Spectrometry, 26(3), 542–549. https://doi.org/10.1039/c0ja00197j