| Zugriffsnummer | 25441 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si |
| Autor(in); Institution |
Seah, M.P.; Quality of Life Division, National Physical Laboratory (NPL), Teddington, Middlesex , UK
Unger, W.E.S.; Bundesanstalt für Materialforschung und -prüfung (BAM), Berlin, GERMANY
Wang, Hai; Physicochemical and Chemical Engineering Division, National Research Center for Certified Reference Materials (NRCCRM), Bei Sanhuan Donglu, Chaoyang District, Beijing, CHINA
Jordaan, W.; National Metrology Institute of South Africa, Surface and Microanalysis (NMISA), Pretoria, SOUTH AFRICA
Gross, Th.; Bundesanstalt für Materialforschung und -prüfung (BAM), Berlin, GERMANY
Dura, J.A.; NIST-Center for Neutron Research, Gaithersburg, MD, USA
Moon, Dae Won; Division of Chemical Metrology and Materials Evaluation, Korea Research Institute of Standards and Science (KRISS), Taejon, REPUBLIC OF KOREA
Totarong, P.; National Institute of Metrology, Thailand (NIMT), Pathumthanee, THAILAND; Thai Microelectronics Center, National Electronics and Computer Technology Center, National Sciences and Technology Development Agency, Ministry of Science and Technology, Amphur Mueng Chachoengsao, THAILAND
Krumrey, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Hauert, R.; Swiss Federal Laboratories for Materials Testing and Research (EMPA), Dübendorf, SWITZERLAND
Zhiqiang, Mo; Chemical and Materials, PSB Corp., SINGAPORE
|
| Quelle/Jahr | Surface and Interface Analysis: 41 (2009), 5, 430 - 439 |
| ISSN | 0142-2421 (PRINT) ; 1096-9918 (ONLINE) |
| DOI | |
| Verlag | Chichester [u.a.]: Wiley |
| Freie Schlagworte | attenuation length ; calibration ; silicon dioxide ; thickness ; ultra-thin oxide |
| Zusammenfassung | Results from a study conducted between National Metrology Institutes (NMIs) for themeasurements of the absolute thicknesses of ultra-thin layers of SiO2 on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. ‘Amount of substance’ may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5–8 nm on Si substrates, expressed as the thickness of SiO2. Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately (0.3 nm. The SiO2 samples were of ultra-thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X-ray photoelectron spectroscopy or X-ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09–0.27 nm, equivalent to 0.4–1.0 monolayers over the 1.5–8.0 nmnominal thickness range studied. If the sample-to-sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05–0.25 nm or ∼1.4% relative standard uncertainties. The best results achieve ∼1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra-thin thermal SiO2 on Si layers, by calibration usingwavelengthmethods in an approach that may be extended to other material systems. |
Zitierung
Seah, M., Unger, W., Wang, H., Jordaan, W., Gross, T., Dura, J., Moon, D. W., Totarong, P., Krumrey, M., Hauert, R., & Zhiqiang, M. (2009). Ultra-thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si. Surface and Interface Analysis, 41(5), 430–439. https://doi.org/10.1002/sia.3045