| Zugriffsnummer | 25201 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Properties of shunt-protected tunneling devices for the electron counting capacitance standard (ECCS) experiment at PTB [poster] |
| Autor(in); Institution |
Camarota, Benedetta; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Lotkhov, Sergey V.; 2.4, Quantenelektronik, PTB-Braunschweig
Scherer, Hansjörg; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Zorin, Alexander B.; 2.4, Quantenelektronik, PTB-Braunschweig
|
| Quelle/Jahr | 2010 Conference on Precision Electromagnetic Measurements digest:(2010), 291 - 292 |
| Herausgeber(in) |
Song, Yang Sup
|
| ISBN | 978-1-4244-6794-5 (print) ; 978-1-424-46796-9 (CD-ROM) |
| Verlag | Piscataway, NJ: IEEE Operations Center |
| Konferenzangaben | 2010 Conference on Precision Electromagnetic Measurements, CPEM, Daejeon, 13-18, June, 2010, South Korea |
| Freie Schlagworte | Single-electron tunneling ; Quantum standards ; Capacitance ; Tunnel junction ; Metrology |
| Zusammenfassung | We report on the progress in the Electron-Counting-Capacitance-Standard (ECCS) experiment. In particular, we address electrostatic breakdown in metallic single-electron tunneling (SET) structures fabricated on high-quality insulating substrates, an approach was developed via on-chip silicon shunts protecting the high-ohmic nanoscale tunnel junctions against damage. |
Zitierung
Camarota, B., Lotkhov, S. V., Scherer, H., Weimann, T., Hinze, P., & Zorin, A. B. (2010). Properties of shunt-protected tunneling devices for the electron counting capacitance standard (ECCS) experiment at PTB [poster]. 2010 Conference on Precision Electromagnetic Measurements, CPEM, Daejeon, 13-18, June, 2010, South Korea.