| Zugriffsnummer | 24929 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Simulation of single-electron transport processes in thin granulated chromium films |
| Autor(in); Institution |
Zalunin, V. O.; Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, RUSSIA
Krupenin, V. A.; Moscow State University, Moscow, RUSSIA; Russian Academy of Sciences, Institute of Nanotechnologies of Microelectronics, Moscow, RUSSIA
Vasenko, S. A.; Moscow State University, Moscow, RUSSIA
Zorin, Alexander B.; 2.4, Quantenelektronik, PTB-Braunschweig; Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, RUSSIA
|
| Quelle/Jahr | JETP Letters: 91 (2010), 8, 402 - 406 |
| ISSN | 0021-3640 (PRINT) ; 1090-6487 (ONLINE) |
| DOI | |
| Verlag | Heidelberg [u.a.]: Springer [u.a.] |
| Zusammenfassung | The results of the numerical simulation of the single-electron transport in two-dimensional granulated chromium films at low temperatures are reported. A theoretical model has been developed in which the granulated film is represented as a two-dimensional matrix of conducting metallic granules (islands), which are weakly coupled with each other through slightly transparent tunnel barriers, ensuring the transport of single electrons localized on the islands. The recently measured current-voltage characteristics of submicron rectangular chromium samples have been explained by taking into account the inhomogeneities in the nanometer sizes of the islands and their effective electron temperature depending on the flowing current. A transition from the two-dimensional regime to the quasi-one-dimensional regime of the single-electron transport leading to the experimentally observed hysteresis has been revealed in the simulated system. Original Russian text published in: Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2010, Vol. 91, No. 8, pp. 436-441. |
