| Zugriffsnummer | 24540 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Advances in flash memories |
| Autor(in); Institution |
Ludwig, Christoph; Q-Cells SE, Bitterfeld-Wolfen, GERMANY
Beug, Marc Florian; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Küsters, Karl-Heinz; Conergy Solar Module GmbH, Frankfurt (Oder), GERMANY
|
| Quelle/Jahr | Materials Science - Poland: 28 (2010), 1, 105 - 115 |
| ISSN | 0137-1339 |
| URL | |
| Verlag | Wroclaw: Oficyna Wydawn. Politechn. |
| Konferenzangaben | 3rd Workshop on Hybrid Nanostructured Materials, Prague, 05, November, 2007, Czech Republic |
| Freie Schlagworte | Non-volatile memory ; Flash ; Charge-trapping ; SONOS ; TANOS ; High workfunction gate ; High-k dielectric ; Double patterning ; Erase saturation |
| Zusammenfassung | In this article we discuss the fundamental challenges of the down-scaling of flash memory cells for mass storage applications. A general scaling issue for all different memory cell concepts is the structuring limit of conventional lithography. Therefore sub-lithographical structuring methods like e.g. double-patterning for future flash chips will be evaluated. Another common scaling challenge of charge trapping (CT) and floating gate (FG) cells, the two future concurrent flash memory cell concepts, is the introduction of new materials such as high-k dielectrics. Their implementation into CT and FG cells and the scaling related electrical issues of both cell concepts will be also discussed. |
