| Zugriffsnummer | 24379 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Performance and spectroscopic behaviour of DePFET macropixels |
| Autor(in); Institution |
Lauf, T.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Aschauer, F.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Herrmann, S.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Hilchenbach, M.; Max-Planck-Institute for Solar System Research, Katlenburg-Lindau, GERMANY
Krumrey, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Lechner, P.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Lutz, G.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Majewski, P.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Porro, M.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Richter, R.H.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANYMax-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Scholze, Frank; 7.2, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Strueder, L.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Treis, J.; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
Vita, G. de; Max-Planck-Institute for extraterrestrical Physics, semiconductor laboratory, Garching, GERMANY
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| Quelle/Jahr | 2009 IEEE Nuclear Science Symposium conference record : [including the 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference], NSS/MIC 2009; Orlando, Florida, USA, 24 October - 1 November 2009: N24-5 (2009), 1202 - 1207 |
| ISBN | 978-1-4244-3962-1 |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | Nuclear Science Symposium Medical Imaging Conference, Orlando, Fla., 25-31 October 2009, USA |
| Freie Schlagworte | DePFET ; macropixel ; APS ; radiation detector |
| Zusammenfassung | The combined Detector/Amplifier structure DePFET (Depleted P-channel Field Effect Transistor) features excellent energy resolution, low noise readout at high speed and low power consumption. This is combined with the possibility of random accessibility of pixels and on-demand readout. In addition it possesses all advantages of a sideways depleted device, i.e. 100% fill factor and very good quantum efficiency. Combining the DePFET structure with a silicon drift detector (SDD) like drift ring structure forms a so-called macropixel device which allows for large flexibility in terms of pixel size. All this makes DePFET macropixels a promising new building block for large area silicon radiation detector devices. In this paper, first results of qualifying measurements performed with a macropixel prototype are presented. The detector shows good linearity over the investigated energy range and no significant charge loss within the pixel area. |
Zitierung
Lauf, T., Aschauer, F., Herrmann, S., Hilchenbach, M., Krumrey, M., Lechner, P., Lutz, G., Majewski, P., Porro, M., Richter, R., Scholze, F., Strueder, L., Treis, J., & Vita, G. D. (2009). Performance and spectroscopic behaviour of DePFET macropixels. Nuclear Science Symposium Medical Imaging Conference, Orlando, Fla., 25-31 October 2009, USA.