| Zugriffsnummer | 24347 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | GIXRF–NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen |
| Autor(in); Institution |
Pagels, M.; Technische Universität Berlin, Institut für Optik und Atomare Physik, Analytische Röntgenphysik, Berlin, GERMANY
Reinhardt, Falk; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Pollakowski, Beatrix; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Roczen, M.; Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Berlin, GERMANY
Becker, C.; Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik,Berlin, GERMANY
Lips, K.; Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Berlin, GERMANY
Rech, B.; Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik, Berlin, GERMANY
Kanngießer, Birgit; Technische Universität Berlin, Institut für Optik und Atomare Physik, Analytische Röntgenphysik, Berlin, GERMANY
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Proceedings of the EMRS 2009 Spring Meeting - Symposium R. Nuclear Instruments and Methods in Physics Research B: 268 (2010), 3-4, 370 - 373 |
| ISSN | 0168-583X |
| DOI | |
| Verlag | Amsterdam [u.a.]: Elsevier |
| Konferenzangaben | X-ray Techniques for Advanced Materials, Nanostructures and Thin Films: from Laboratory Sources to Synchrotron Radiation, E-MRS Spring Meeting 2009, Strasbourg, 8-12, June, 2009, France |
| Freie Schlagworte | Silicon thin-film solar cell ; ZnO/Si interface ; Grazing incidence X-ray fluorescence ; Near edge X-ray absorption fine structure ; spectroscopy ; Depth profiles ; Reference-free |
| Zusammenfassung | GIXRF-NEXAFS is a combination of X-ray spectroscopy methods which allows for a non-destructive, depth-dependant chemical speciation of layer systems in the range of a few to several hundred nanometers. We applied this technique to a model system for thin-film silicon solar cells, a Si/ZnO layer system, which was investigated in its as-deposited and its annealed state. By means of total reflection at the buried ZnO/Si interface we could gain access to chemical information on the interface. In addition, a diffusion of contaminants from the ZnO into the Si was observed after annealing. |
Zitierung
Pagels, M., Reinhardt, F., Pollakowski, B., Roczen, M., Becker, C., Lips, K., Rech, B., Kanngießer, B., & Beckhoff, B. (2010). GIXRF–NEXAFS investigations on buried ZnO/Si interfaces: A first insight in changes of chemical states due to annealing of the specimen. Nuclear Instruments and Methods in Physics Research B, 268(3-4), 370–373. https://doi.org/10.1016/j.nimb.2009.09.009