| Zugriffsnummer | 24311 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium |
| Autor(in); Institution |
Giubertoni, D.; Fondazione Bruno Kessler, Povo, Trento, ITALY
Pepponi, G.; Fondazione Bruno Kessler, Povo, Trento, ITALY
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Hönicke, Philipp; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Gennaro, S.; Fondazione Bruno Kessler, Povo, Trento, ITALY
Meirer, F.; Atominstitut der Oesterreichischen Universitaeten TU Wien, Wien, AUSTRIA
Ingerle, D.; Atominstitut der Oesterreichischen Universitaeten TU Wien, Wien, AUSTRIA
Steinhauser, G.; Atominstitut der Oesterreichischen Universitaeten TU Wien, Wien, AUSTRIA
Fried, M.; MFA-KFKI, Budapest, HUNGARY
Petrik, P.; MFA-KFKI, Budapest, HUNGARY
Parisini, A.; CNR-IMM, Bologna, ITALY
Reading, M.A.; School of Computing, Science and Engineering and Institute of Materials Research - University of Salford, Salford, UK
Streli, J.A.; Atominstitut der Oesterreichischen Universitaeten TU Wien, Wien, AUSTRIA
Berg, J.A. van den; School of Computing, Science and Engineering and Institute of Materials Research - University of Salford, Salford, UK
Bersani, M.; Fondazione Bruno Kessler, Povo, Trento, ITALY
|
| Quelle/Jahr | Frontiers of characterization and metrology for nanoelectronics:(2009), 45 - 49 |
| Schriftenreihe | AIP Conference Proceedings: 1173 |
| Herausgeber(in) |
Seiler, David G.
|
| ISBN | 978-0-7354-0712-1 |
| DOI | |
| URL | |
| Verlag | Melville, NY: American Inst. of Physics |
| Konferenzangaben | The 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (ICFCMN), Albany, NY, 11-15, May, 2009, USA |
| Klassifikationscode | PACS: 85.40.Ry |
| Freie Schlagworte | ultra shallow junctions ; arsenic ; silicon ; SIMS ; GIXRF ; MEIS ; z-contrast ADF-STEM ; ellipsometry |
| Zusammenfassung | The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multilaboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques. |
Zitierung
Giubertoni, D., Pepponi, G., Beckhoff, B., Hönicke, P., Gennaro, S., Meirer, F., Ingerle, D., Steinhauser, G., Fried, M., Petrik, P., Parisini, A., Reading, M., Streli, J., Berg, J. V. D., & Bersani, M. (2009). Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. The 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (ICFCMN), Albany, NY, 11-15, May, 2009, USA. https://doi.org/10.1063/1.3251258