| Zugriffsnummer | 24310 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Reference-free characterisation of semiconductor surface contamination and nanolayers by X-ray spectrometry |
| Autor(in); Institution |
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Fliegauf, Rolf; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Hönicke, Philipp; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Kolbe, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Müller, Matthias; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Pollakowski, Beatrix; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Reinhardt, Falk; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Weser, Jan; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Ulm, Gerhard; 7.2, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | Frontiers of characterization and metrology for nanoelectronics:(2009), 198 - 202 |
| Schriftenreihe | AIP Conference Proceedings: 1173 |
| Herausgeber(in) |
Seiler, David G.
|
| ISBN | 978-0-7354-0712-1 |
| DOI | |
| URL | |
| Verlag | Melville, NY: American Inst. of Physics |
| Konferenzangaben | The 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (ICFCMN), Albany, NY, 11-15, May, 2009, USA |
| Klassifikationscode | PACS: 32.30.Rj ; PACS: 33.20.Rm ; PACS: 78.70.Dm ; PACS: 78.70.En |
| Freie Schlagworte | x-ray-spectrometry ; novel measurements methods ; surface contamination ; nanolayer characterization |
| Zusammenfassung | X-Ray Spectrometry (XRS) is a wide spread technique for revealing reliable information concerning the elemental composition and binding state in various materials. Reference-free quantitation in XRS is based on the knowledge of both the instrumental and fundamental atomic parameters. In different configurations, both matrix and trace constituents of a sample or layer thicknesses can be determined, even providing lateral or depth-profiling elemental information. With respect to very flat samples, such as semiconductor wafers or structures, the photon energy and the angle of incidence of the exciting radiation determines the probing depth of XRS analysis. In totalreflection geometry, i.e. having an angle of incidence smaller than the critical angle of total external reflection, only surface contamination and the surface-near layer of a few nm contributes to the fluorescence spectra. Allowing the angle of incidence to be varied from close to zero up to about four times the critical angle of total external reflection, the probing depth ranges from a few up to several hundreds of nm. The methodological development of XRS at the Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, is, among other issues, dedicated to high-end investigations in the R&D of semiconductor samples requiring reference-free methods, in particular for novel materials for which not enough appropriate reference materials are available. PTB can handle 200 mm and 300 mm silicon wafers as well as smaller semiconductor wafers in its XRS instrumentation. The instrumentation for 200 mm and 300 mm Si wafers is equipped with an EFEM module. The use of undulator radiation in the PTB laboratory at BESSY is advantageous for off-line contamination control on semiconductor surfaces as it provides very high photon fluxes for the efficient excitation of light elements. Optimizing the respective excitation conditions such as the angle of incidence and the incident photon energy, detection limits of light elements in the fg range can be achieved. Grazing incidence investigations demonstrated the capability for depth profiling of light elements in nanolayers. Reference-free XRS has the potential to contribute to the thickness and composition analysis of nearly vertical sidewalls of semiconductor test structures. This technique is also able to contribute to the elemental depthprofiling of ultra-shallow junctions (USJ), i.e. near-surface implantation profiles in wafers, as a complementary approach to other analytical techniques. At a given incident angle, XRS can be combined with X-ray absorption spectroscopy (NEXAFS, XANES or EXAFS), revealing information on the depth profile of the chemical structure in a sample, e.g. about buried nanolayers or interfaces with varying chemical state. |
Zitierung
Beckhoff, B., Fliegauf, R., Hönicke, P., Kolbe, M., Müller, M., Pollakowski, B., Reinhardt, F., Weser, J., & Ulm, G. (2009). Reference-free characterisation of semiconductor surface contamination and nanolayers by X-ray spectrometry. The 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (ICFCMN), Albany, NY, 11-15, May, 2009, USA. https://doi.org/10.1063/1.3251220