| Zugriffsnummer | 24166 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Measurement of the nonlinearity of Ge- and InGaAs-photodiodes at high irradiance levels |
| Autor(in); Institution |
Lopez Ordonez, Marco Antonio; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Molina, J. C.; Centro Nacional de Metrología, Querétaro, MEXICO
Hofer, Helmuth; 4.5, Optische Technologien, PTB-Braunschweig
Sperling, Armin; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig
Kück, Stefan; 4.5, Optische Technologien, PTB-Braunschweig
|
| Quelle/Jahr | MAPAN - Journal of Metrology Society of India: 25 (2010), 1, 47 - 52 |
| ISSN | 0970-3950 (PRINT) ; 0974-9853 (ONLINE) |
| DOI | |
| URL | |
| Verlag | New Delhi: Metrology Society of India |
| Zusammenfassung | We present the measurements and the analysis of nonlinearity of Ge- and InGaAs-photodiodes responsivity measured at high irradiance levels (up to ≈ 90 mW / mm²) in the near infrared. The nonlinearity was measured using a fiber-optics-based setup which employs the Differential Spectral Responsivity (DSR) technique. The measurements of the nonlinearity were carried out at different laser beam diameters with fiber optic attachment as well as open-beam. All photodiodes investigated present a nonlinearity of the saturation type, which depends on the beam diameter of the radiation source. |
Zitierung
Lopez Ordonez, M. A., Molina, J. C., Hofer, H., Sperling, A., & Kück, S. (2010). Measurement of the nonlinearity of Ge- and InGaAs-photodiodes at high irradiance levels. MAPAN - Journal of Metrology Society of India, 25(1), 47–52. https://doi.org/10.1007/s12647-010-0008-8