| Zugriffsnummer | 24079 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Investigations of the surface chemical composition and atomic structure of ex-situ Sulfur passivated Ge(100) |
| Autor(in); Institution |
Fleischmann, C.; Instituut voor Kern-en Stralingfysica and INPAC, K.U.Leuven, Leuven, BELGIUM
Sioncke, S.; IMEC, Leuven, BELGIUM
Schouteden, K.; Laboratorium voor Vaste-Stoffysica en Magnetisme and INPAC, K.U.Leuven, Leuven, BELGIUM
Paredis, K.; Instituut voor Kern-en Stralingfysica and INPAC, K.U.Leuven, Leuven, BELGIUM
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Müller, Matthias; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Kolbe, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Meuris, M.; IMEC, Leuven, BELGIUM
Haesendonck, C.V. Van; Laboratorium voor Vaste-Stoffysica en Magnetisme and INPAC, K.U.Leuven, Leuven, BELGIUM
Temst, K.; Instituut voor Kern-en Stralingfysica and INPAC, K.U.Leuven, Leuven, BELGIUM
Vantomme, A.; Instituut voor Kern-en Stralingfysica and INPAC, K.U.Leuven, Leuven, BELGIUM
|
| Quelle/Jahr | Analytical techniques for semiconductor materials and process characterization 6 : (ALTECH 2009):(2009), 421 - 432 |
| Schriftenreihe | ECS Transactions: 25,3 |
| Herausgeber(in) |
Kolbesen, B.
|
| ISSN | 1938-5862 (PRINT) ; 1938-6737 (ONLINE) |
| ISBN | 978-1-566-77740-7 |
| DOI | |
| Verlag | Pennington, NJ: The Electrochemical Society |
| Konferenzangaben | 216th ECS Meeting and ALTECH Workshop, Vienna, 4-9, October, 2009, Austria |
| Zusammenfassung | Using complementary surface analysis techniques, we have studied the chemical and structural properties of the S/Ge(100) passivation layer formed upon sulfidation in an aqueous (NH4)2S solution. Our experiments have revealed that only S-Ge bonds are formed upon the adsorption of S and that the surface is essentially free of other S-containing species (i.e. Sn or SOx). The passivation treatment was found to reduce, but not to fully inhibit Ge-O bonds on the surface. Moreover, we have shown that the top-layer of the passivated surface shows a high degree of disorder even though it is associated with a spotty (1x1) RHEED pattern. Based on our experimental findings, we conclude that the passivation layer can be best described as a thin amorphous GeSxOy film atop a partially ordered interfacial layer, a surface model that has been proposed previously in literature. |
Zitierung
Fleischmann, C., Sioncke, S., Schouteden, K., Paredis, K., Beckhoff, B., Müller, M., Kolbe, M., Meuris, M., Haesendonck, C. V., Temst, K., & Vantomme, A. (2009). Investigations of the surface chemical composition and atomic structure of ex-situ Sulfur passivated Ge(100). 216th ECS Meeting and ALTECH Workshop, Vienna, 4-9, October, 2009, Austria. https://doi.org/10.1149/1.3204433