| Zugriffsnummer | 24076 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Characterisation of High-k containing nanolayers by reference-free X-ray fluorescence analysis with synchrotron radiation |
| Autor(in); Institution |
Kolbe, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Krumrey, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Reading, M.; Institute for Materials Research, University of Salford, Salford, UK
Berg, J. van den; Institute for Materials Research, University of Salford, Salford, UK
Conard, T.; IMEC, Leuven, BELGIUM
Gendt, S. De; IMEC, Leuven, BELGIUM
|
| Quelle/Jahr | Analytical techniques for semiconductor materials and process characterization 6 : (ALTECH 2009):(2009), 293 - 300 |
| Schriftenreihe | ECS Transactions: 25,3 |
| Herausgeber(in) |
Kolbesen, B.
|
| ISSN | 1938-5862 (PRINT) ; 1938-6737 (ONLINE) |
| ISBN | 978-1-566-77740-7 |
| DOI | |
| Verlag | Pennington, NJ: The Electrochemical Society |
| Konferenzangaben | 216th ECS Meeting and ALTECH Workshop, Vienna, 4-9, October, 2009, Austria |
| Zusammenfassung | In the laboratory of the Physikalisch-Technische Bundesanstalt at the electron storage ring BESSY II various nanolayered systems have been investigated employing reference-free X-ray fluorescence analysis (XRF). As an example of advanced materials characterization, an investigation of Hf containing thin oxide layers is shown. For cross comparison, these samples have been also measured by X-ray reflectometry (XRR) in the PTB laboratory and by other methods within the ANNA project by which the thickness of the Hf containing top layers determined by XRF within their respective uncertainties was confirmed. The XRF spectra were deconvolved employing the detector response functions to deduce the intensity of the fluorescence lines corresponding to the Hf L3 subshell. The investigation of nanolayered systems especially in the lower energy range demonstrates advantages such as different absorption conditions which allow for better dynamics and the suppression of the silicon fluorescence signal from the substrate, but needs more effort in determining the respective fundamental parameters. |
Zitierung
Kolbe, M., Beckhoff, B., Krumrey, M., Reading, M., Berg, J. V. D., Conard, T., & Gendt, S. D. (2009). Characterisation of High-k containing nanolayers by reference-free X-ray fluorescence analysis with synchrotron radiation. 216th ECS Meeting and ALTECH Workshop, Vienna, 4-9, October, 2009, Austria. https://doi.org/10.1149/1.3204419