Pumping properties of the hybrid single-electron transistor in dissipative environment

Lotkhov, Sergey V.; Kemppinen, A.; Kafanov, S.; Pekola, J. P.; Zorin, Alexander B.

doi:https://doi.org/10.1063/1.3227839

Zugriffsnummer	24005
Dokumenttyp	Zeitschriftenartikel
Sprache	Englisch
Titel	Pumping properties of the hybrid single-electron transistor in dissipative environment
Autor(in); Institution	Lotkhov, Sergey V.; 2.4, Quantenelektronik, PTB-Braunschweig Kemppinen, A.; Centre for Metrology and Accreditation (MIKES), Espoo, FINLAND Kafanov, S.; Helsinki University of Technology, Low Temperature Laboratory, TKK, FINLAND Pekola, J. P.; Helsinki University of Technology, Low Temperature Laboratory, TKK, FINLAND Zorin, Alexander B.; 2.4, Quantenelektronik, PTB-Braunschweig
Quelle/Jahr	Applied Physics Letters: 95 (2009), 112507-1 - 112507-3
ISSN	0003-6951 (PRINT) ; 1077-3118 (ONLINE)
DOI	https://doi.org/10.1063/1.3227839
Verlag	Melville, NY: American Institute of Physics
Klassifikationscode	PACS: 85.35.Gv
Freie Schlagworte	resistors ; single electrin transistors ; superconducting materials ; tunnelling
Zusammenfassung	Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrO_x with a sum resistance R≈80kΩ were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.

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Lotkhov, S. V., Kemppinen, A., Kafanov, S., Pekola, J. P., & Zorin, A. B. (2009). Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters, 95, 112507-1–112507-3. https://doi.org/10.1063/1.3227839

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