| Zugriffsnummer | 23909 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Model-based SEM for dimensional metrology tasks in semiconductor and mask industry |
| Autor(in); Institution |
Frase, Carl Georg; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Gnieser, Dominic; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Bosse, Harald; 5, Fertigungsmesstechnik, PTB-Braunschweig
|
| Quelle/Jahr | Journal of Physics D: 42 (2009), 18, 183001-1 - 183001-17 |
| ISSN | 0022-3727 (PRINT) ; 1361-6463 (ONLINE) |
| DOI | |
| URL | |
| Verlag | Bristol: IOP |
| Klassifikationscode | PACS: 07.78.+s ; PACS: 85.40.Hp |
| Freie Schlagworte | dimensional metrology ; SEM ; nanotechnology |
| Zusammenfassung | The requirements on the use of scanning electron microscopy (SEM) as a measurement technique for the process control of dimensional parameters are most challenging in the production of masks and wafers in the semiconductor industry. Subtle details of SEM signal variations have to be thoroughly understood to be able to monitor and trace small process variations to changes in dimensional parameters of the features to be controlled. This paper reviews the fundamentals, special performance features and applications of existing SEM image contrast simulation packages based on Monte Carlo methods. |
