| Zugriffsnummer | 23573 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Ultralow energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques |
| Autor(in); Institution |
Giubertoni, D.; Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
Pepponi, G.; Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
Hönicke, Philipp; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Beckhoff, Burkhard; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Iacob, E.; Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
Gennaro, S.; Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
Bersani, M.; Center for Materials and Microsystems, Fondazione Bruno Kessler, Povo, Trento, ITALY
|
| Quelle/Jahr | Journal of Vacuum Science and Technology B: 28 (2010), 1, C1C84 - C1C89 |
| ISSN | 0734-211X ; 1071-1023 |
| DOI | |
| Verlag | New York, NY: AVS |
| Konferenzangaben | International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling (INSIGHT-2009), Napa, CA, 26-29, April, 2009, USA |
| Klassifikationscode | PACS: 61.72.uf ; PACS: 61.80.Jh ; PACS: 81.65.-b ; PACS: 68.35.bg ; PACS: 82.80.Ej ; PACS: 82.80.Ms |
| Zusammenfassung | Boron ultralow energy (0.2-3 keV) high dose (1x1015 cm-2) implants in single crystalline Si (100) were characterized by secondary ion mass spectrometry using an ultralow energy (0.35–0.5 keV) O2+ ion primary beam and collecting positive secondary ions. In particular, the not fully oxidizing approaches (primary beam oblique incidence and ultrahigh vacuum analysis atmosphere) were investigated because they are expected to provide better accuracy on the profile shape, especially in the region between the surface and the native oxide/substrate interface. The main drawback represented by an early formation of roughness on the crater bottom has been overcome by combining the ion sputtering with the rotation of the sample during the analysis. The reduced formation of roughness ensures more stable sputtering conditions and a more stable erosion rate with a more accurate depth calibration. The measured dose values were then cross-checked comparing them with results of soft x-ray synchrotron radiation grazing incidence x-ray fluorescence. |
Zitierung
Giubertoni, D., Pepponi, G., Hönicke, P., Beckhoff, B., Iacob, E., Gennaro, S., & Bersani, M. (2010). Ultralow energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. Journal of Vacuum Science and Technology B, 28(1), C1C84–C1C89. https://doi.org/10.1116/1.3292638