| Zugriffsnummer | 23302 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation |
| Autor(in); Institution |
Michel, B.; Institut für Oberflächentechnik (IOT), Technische Universität Braunschweig, Braunschweig, GERMANY
Giza, M.; Department of Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung (MPIE), Düsseldorf, GERMANY
Krumrey, Michael; 7.1, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Eichler, M.; Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig, GERMANY
Grundmeier, G.; Chair of Technical and Macromolecular Chemistry, University of Paderborn, Paderborn, GERMANY
Klages, C.-P.; Institut für Oberflächentechnik (IOT), Technische Universität Braunschweig, Braunschweig, GERMANY; Fraunhofer Institute for Surface Engineering and Thin Films (IST), Braunschweig, GERMANY
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| Quelle/Jahr | Journal of Applied Physics: 105 (2009), 7, 073302-1 - 073302-9 |
| ISSN | 0021-8979 (PRINT) ; 1089-7550 (ONLINE) |
| DOI | |
| Verlag | Melville, NY: AIP |
| Klassifikationscode | PACS: 68.37.Ps ; PACS: 78.30.-j ; PACS: 68.35.bg ; PACS: 79.60.-i ; PACS: 81.65.Mq ; PACS: 81.65.Cf |
| Zusammenfassung | Silicon wafers were exposed to a dielectric barrier discharge (DBD) at atmospheric pressure, which was ignited by applying a high voltage ()12 kV peak voltage) to a small gap (dg=300 μm) above the wafer surface in an oxygen process gas atmos-phere. The effect of the DBD on H-terminated silicon and native silicon oxide surfaces was investigated in situ and ex situ by means of Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy (XPS). The influence of the treatment of surface roughness was studied by atomic force microscopy. In order to determine the thickness of the newly formed oxide under DBD influence, the method of calculating the oxide thickness from the Si 2p peak ratio in the XPS spectrum, which has so far been described for thermal oxides only, was adopted with x-ray re-flectometry calibration samples. Additionally, infrared spectroscopy and spectro-scopic ellipsometry were used to verify the XPS measurement. The calculated thick-ness values can be fitted with the growth law d=d0 1n[(t/r)+k], with d being the oxide thickness, grown during DBD exposure time t. Oxide thickness of more than 3 nm could be achieved within 350 s DBD exposure time. Our analysis of infrared spectra, XPS, and ellipsometry leads us to conclude that the newly formed oxide is porous with a pore fraction of roughly 10%. |
Zitierung
Michel, B., Giza, M., Krumrey, M., Eichler, M., Grundmeier, G., & Klages, C.-P. (2009). Effects of dielectric barrier discharges on silicon surfaces: Surface roughness, cleaning, and oxidation. Journal of Applied Physics, 105(7), 073302-1–073302-9. https://doi.org/10.1063/1.3088872