Zugriffsnummer 23243
Dokumenttyp Zeitschriftenartikel
Sprache Englisch
Titel Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators
Autor(in); Institution
Kleine-Ostmann, Thomas; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Hein, Günter; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Dawson, Philip; University of Manchester, Photon Science Institute, Manchester, UK
Marso, Michel; Forschungszentrum Jülich, Institut für Bio- und Nanosysteme, Jülich, GERMANY
Koch, Martin; TU Braunschweig, Braunschweig, GERMANY
Quelle/Jahr Journal of Applied Physics: 105 (2009), 093707-1 - 093707-6
ISSN 0021-8979 (PRINT) ; 1089-7550 (ONLINE)
DOI
Verlag Melville, NY: American Institute of Physics
Klassifikationscode PACS: 84.40.Ua ; PACS: 84.30.Qi ; PACS: 72.20.-i ; PACS: 73.40.Kp ; PACS: 72.80.Ey
Freie Schlagworte Terahertz Modulators ; 2DEG ; aluminium compounds ; electron density ; gallium arsenide ; III-V semiconductors ; modulators ; semiconductor devices ; semiconductor heterojunctions ; terahertz wave devices ; two-dimensional electron gas
Zusammenfassung In this paper we discuss the room-temperature modulation properties of terahertz modulators, which depend on the depletion of a two-dimensional electron gas. By changing the electron density of the two-dimensional electron gas in a AlGaAs/GaAs heterostructure by applying an external gate voltage, the transmission and reflection properties of the device change. We studied the modulation properties of different modulator designs using terahertz time-domain spectroscopy and reported a detailed analysis of the electronic properties. We found that the nonideal depletion properties of terahertz modulators can be attributed to an incomplete depletion at low voltages underneath the center of large gates.

Zitierung

Kleine-Ostmann, T., Pierz, K., Hein, G., Dawson, P., Marso, M., & Koch, M. (2009). Spatially resolved measurements of depletion properties of large gate two-dimensional electron gas semiconductor terahertz modulators. Journal of Applied Physics, 105, 093707-1–093707-6. https://doi.org/10.1063/1.3122595

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