| Zugriffsnummer | 23010 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Al2O3/ZrO2 nanolaminates as ultrahigh gas-diffusion barriers - a strategy for reliable encapsulation of organic electronics |
| Autor(in); Institution |
Meyer, Jens; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Görrn, Patrick; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Bertram, Franz; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Hamwi, Sami; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Winkler, Thomas; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Johannes, Hans-Hermann; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Riedl, Thomas; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
Kowalsky, Wolfgang; TU Braunschweig, Institut für Hochfrequenztechnik, Braunschweig, GERMANY
|
| Quelle/Jahr | Advanced Materials: 21 (2009), 18, 1845 - 1849 |
| ISSN | 0935-9648 (PRINT) ; 1521-4095 (ONLINE) |
| DOI | |
| Verlag | Weinheim: Wiley-VCH |
| Freie Schlagworte | nanolaminates ; organic electronics ; organic light-emitting diodes ; thin films |
| Zusammenfassung | In this Communication, we report on thin encapsulation layers prepared by ALD at a temperature of 80 8C. Specifically, we study neat Al2O3 films as a reference, and introduce novel highly efficient permeation barriers based on so-called nanolaminate structures. A nanolaminate, in this case, is a composite film consisting of repetitively deposited ultrathin (a few nanometers thick) alternating layers of Al2O3 and ZrO2. The alternating nanolayer structure suppresses the formation of both microscopic voids and nanocrystals. As a result, the probability of the occurrence of statistical defects in the barrier structure related to permeation paths along connected voids or grain boundaries is significantly reduced.We demonstrate that nanolaminates render pinhole-free thin-film encapsulation layers suitable for large-area organic devices possible. |
Zitierung
Meyer, J., Görrn, P., Bertram, F., Hamwi, S., Winkler, T., Johannes, H.-H., Weimann, T., Hinze, P., Riedl, T., & Kowalsky, W. (2009). Al2O3/ZrO2 nanolaminates as ultrahigh gas-diffusion barriers - a strategy for reliable encapsulation of organic electronics. Advanced Materials, 21(18), 1845–1849. https://doi.org/10.1002/adma.200803440